WSD75100DN56 N-fantsona 75V 100A DFN5X6-8 WINSOK MOSFET

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WSD75100DN56 N-fantsona 75V 100A DFN5X6-8 WINSOK MOSFET

famaritana fohy:

laharan'ny ampahany:Sary WSD75100DN56

BVDSS:75V

ID:100A

RDSON:5,3mΩ 

Channel:N-fantsona

Package:DFN5X6-8


Product Detail

Fampiharana

Tags vokatra

Vidin'ny WINSOK MOSFET

Ny volavolan'ny WSD75100DN56 MOSFET dia 75V, ny ankehitriny dia 100A, ny fanoherana dia 5.3mΩ, ny fantsona dia N-channel, ary ny fonosana dia DFN5X6-8.

Faritra fampiharana WINSOK MOSFET

MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.

WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa

AOS MOSFET AON6276, AON6278, AON628, AON6282, AON6448. .

MOSFET masontsivana

marika famantarana

fikirana

naoty

vondrona

VDS

Volavolan'ny tatatra

75

V

VGS

Gate-Source Voltage

±25

V

TJ

Temperature Junction ambony indrindra

150

°C

ID

Fitahirizana mari-pana

-55 hatramin'ny 150

°C

IS

Diode Continuous Forward Current, TC=25°C

50

A

ID

Continuous Drain Current, VGS=10V,TC=25°C

100

A

Continuous Drain Current, VGS=10V,TC=100°C

73

A

IDM

Current Drain Pulsed, TC=25°C

400

A

PD

Fandrotsahana hery ambony indrindra,TC=25°C

155

W

Fandrotsahana hery ambony indrindra,TC=100°C

62

W

RθJA

Thermal Resistance-Junction to Ambient ,t =10s ̀

20

°C

Thermal Resistance-Junction amin'ny Ambient, steady State

60

°C

RqJC

Thermal Resistance-Junction to Case

0.8

°C

IAS

Avalanche Current, Single pulse, L=0.5mH

30

A

EAS

Angovo Avalanche, Pulse tokana, L=0.5mH

225

mJ

 

marika famantarana

fikirana

NATREHINAY

Min.

Typ.

Max.

Unit

BVDSS

Volontany fahatapahan'ny tatatra VGS= 0V, nyD=250uA

75

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Reference amin'ny 25, ID=1mA

---

0.043

---

V/

RDS(ON)

Loharanon'ny tatatra static amin'ny fanoherana2 VGS=10V, ID=25A

---

5.3

6.4

mΩ

VGS(th)

Volavolan'ny vavahady VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.94

---

mV/

IDSS

Loharanon'ny tatatra amin'izao fotoana izao VDS=48 V, VGS=0V, TJ=25

---

---

2

uA

VDS=48 V, VGS=0V, TJ=55

---

---

10

IGSS

Vavahady-Source Leakage Current VGS=±20 V, VDS=0V

---

---

±100

nA

gfs

Transconductance mandroso VDS= 5V, nyD=20A

---

50

---

S

Rg

Vavahady fanoherana VDS=0V ,VGS=0V , f=1MHz

---

1.0

2

Ω

Qg

Tontalin'ny fiampangana vavahady (10V) VDS= 20 V, VGS= 10 V, ID=40A

---

65

85

nC

Qgs

Gate-Source Charge

---

20

---

Qgd

Gate-Drain Charge

---

17

---

Td(on)

Fotoana fanemorana VDD= 30 V, VGEN= 10 V, RG=1Ω, ID=1A ,RL=15Ω.

---

27

49

ns

Tr

Fotoana Mitsangana

---

14

26

Td(eny)

Fotoana fanemorana

---

60

108

Tf

Fotoana fararano

---

37

67

Ciss

Capacitance fampidirana VDS= 20 V, VGS=0V , f=1MHz

3450

3500 4550

pF

Coss

Output Capacitance

245

395

652

Crss

Fahaiza-mifindra mivadika

100

195

250


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