WSD60N10GDN56 N-fantsona 100V 60A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny malefaka WSD60N10GDN56 MOSFET dia 100V, ny ankehitriny dia 60A, ny fanoherana dia 8.5mΩ, ny fantsona dia N-fantsona, ary ny fonosana dia DFN5X6-8.
WINSOK MOSFET faritra fampiharana
MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET motera, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.
Ny saha fampiharana MOSFET WINSOK MOSFET dia mifanaraka amin'ny laharan'ny fitaovana marika hafa
AOS MOSFET AON6226, AON6294, AON6298, AONS6292, AONS6692, AONS66923. TPH6R3ANL,TPH8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET masontsivana
| marika famantarana | fikirana | naoty | vondrona |
| VDS | Volavolan'ny tatatra | 100 | V |
| VGS | Vavahady-Source Voltage | ±20 | V |
| ID@TC=25 ℃ | Continuous Drain Current | 60 | A |
| IDP | Pulsed Drain Current | 210 | A |
| EAS | Avalanche Energy, Pulse tokana | 100 | mJ |
| PD@TC=25 ℃ | Famotehana herinaratra tanteraka | 125 | W |
| TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | ℃ |
| TJ | Ny mari-pana amin'ny Junction miasa | -55 hatramin'ny 150 | ℃ |
| marika famantarana | fikirana | NATREHINAY | Min. | Typ. | Max. | Unit |
| BVDSS | Volontany fahatapahan'ny tatatra | VGS= 0V, nyD=250uA | 100 | --- | --- | V |
| Loharanon'ny tatatra static amin'ny fanoherana | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V,ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS(th) | Volavolan'ny vavahady | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| IDSS | Loharanon'ny tatatra amin'izao fotoana izao | VDS= 80 V, VGS=0V, TJ=25 ℃ | --- | --- | 1 | uA |
| IGSS | Vavahady-Source Leakage Current | VGS=±20V ,VDS=0V | --- | --- | ±100 | nA |
| Qg | Tontalin'ny fiampangana vavahady (10V) | VDS= 50 V, VGS= 10 V, ID=25A | --- | 49.9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12.4 | --- | ||
| Td(on) | Fotoana fanemorana | VDD= 50 V, VGS= 10 V,RG=2.2Ω, ID=25A | --- | 20.6 | --- | ns |
| Tr | Fotoana Mitsangana | --- | 5 | --- | ||
| Td(eny) | Atsaharo ny fotoana fanemorana | --- | 51.8 | --- | ||
| Tf | Fotoana fararano | --- | 9 | --- | ||
| Ciss | Capacitance fampidirana | VDS= 50 V, VGS=0V , f=1MHz | --- | 2604 | --- | pF |
| Coss | Output Capacitance | --- | 362 | --- | ||
| Crss | Fahaiza-mifindra mivadika | --- | 6.5 | --- | ||
| IS | Loharano Mitohy ankehitriny | VG=VD=0V , Force Current | --- | --- | 60 | A |
| ISP | Pulsed Source Current | --- | --- | 210 | A | |
| VSD | Diode Mandrosoa Voltage | VGS= 0V, nyS=12A , TJ=25 ℃ | --- | --- | 1.3 | V |
| trr | Fotoana fanarenana indray | IF=12A,dI/dt=100A/µs,TJ=25 ℃ | --- | 60.4 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 106.1 | --- | nC |
