WSD6070DN56 N-fantsona 60V 80A DFN5X6-8 WINSOK MOSFET

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WSD6070DN56 N-fantsona 60V 80A DFN5X6-8 WINSOK MOSFET

famaritana fohy:

laharan'ny ampahany:Sary WSD6070DN56

BVDSS:60V

ID:80A

RDSON:7,3mΩ 

Channel:N-fantsona

Package:DFN5X6-8


Product Detail

Fampiharana

Tags vokatra

Vidin'ny WINSOK MOSFET

Ny malefaka WSD6070DN56 MOSFET dia 60V, ny ankehitriny dia 80A, ny fanoherana dia 7.3mΩ, ny fantsona dia N-fantsona, ary ny fonosana dia DFN5X6-8.

Faritra fampiharana WINSOK MOSFET

MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET motera, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.

WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa

POTENS Semiconductor MOSFET PDC696X.

MOSFET masontsivana

marika famantarana

fikirana

naoty

vondrona

VDS

Volavolan'ny tatatra

60

V

VGS

Gate-Source Voltage

±20

V

TJ

Temperature Junction ambony indrindra

150

°C

ID

Fitahirizana mari-pana

-55 hatramin'ny 150

°C

IS

Diode Continuous Forward Current, TC=25°C

80

A

ID

Continuous Drain Current, VGS=10V,TC=25°C

80

A

Continuous Drain Current, VGS=10V,TC=100°C

66

A

IDM

Current Drain Pulsed, TC=25°C

300

A

PD

Fandrotsahana hery ambony indrindra,TC=25°C

150

W

Fandrotsahana hery ambony indrindra,TC=100°C

75

W

RθJA

Thermal Resistance-Junction to Ambient ,t =10s ̀

50

°C/W

Thermal Resistance-Junction amin'ny Ambient, steady State

62.5

°C/W

RqJC

Thermal Resistance-Junction to Case

1

°C/W

IAS

Avalanche Current, Single pulse, L=0.5mH

30

A

EAS

Angovo Avalanche, Pulse tokana, L=0.5mH

225

mJ

 

marika famantarana

fikirana

NATREHINAY

Min.

Typ.

Max.

Unit

BVDSS

Volontany fahatapahan'ny tatatra VGS= 0V, nyD=250uA

60

---

---

V

BVDSS/△TJ

BVDSSTemperature Coefficient Reference amin'ny 25, ID=1mA

---

0.043

---

V/

RDS(ON)

Loharanon'ny tatatra static amin'ny fanoherana2 VGS=10V, ID=40A

---

7.0

9.0

mΩ

VGS(th)

Volavolan'ny vavahady VGS=VDS, ID=250uA

2.0

3.0

4.0

V

VGS(th)

VGS(th)Temperature Coefficient

---

-6.94

---

mV/

IDSS

Loharanon'ny tatatra amin'izao fotoana izao VDS=48 V, VGS=0V, TJ=25

---

---

2

uA

VDS=48 V, VGS=0V, TJ=55

---

---

10

IGSS

Vavahady-Source Leakage Current VGS=±20 V, VDS=0V

---

---

±100

nA

gfs

Transconductance mandroso VDS= 5V, nyD=20A

---

50

---

S

Rg

Vavahady fanoherana VDS=0V ,VGS=0V , f=1MHz

---

1.0

---

Ω

Qg

Tontalin'ny fiampangana vavahady (10V) VDS= 30 V, VGS= 10 V, ID=40A

---

48

---

nC

Qgs

Gate-Source Charge

---

17

---

Qgd

Gate-Drain Charge

---

12

---

Td(on)

Fotoana fanemorana VDD= 30 V, VGEN= 10 V, RG=1Ω, ID=1A ,RL=15Ω.

---

16

---

ns

Tr

Fotoana Mitsangana

---

10

---

Td(eny)

Fotoana fanemorana

---

40

---

Tf

Fotoana fararano

---

35

---

Ciss

Capacitance fampidirana VDS= 30 V, VGS=0V , f=1MHz

---

2680

---

pF

Coss

Output Capacitance

---

386

---

Crss

Fahaiza-mifindra mivadika

---

160

---


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