WSD6060DN56 N-fantsona 60V 65A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny volavolan'ny WSD6060DN56 MOSFET dia 60V, ny ankehitriny dia 65A, ny fanoherana dia 7.5mΩ, ny fantsona dia N-channel, ary ny fonosana dia DFN5X6-8.
Faritra fampiharana WINSOK MOSFET
MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET motera, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.
WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa
STMicroelectronics MOSFET STL5DN6F7.PANJIT MOSFET PSMQC73N6NS1.POTENS Semiconductor MOSFET PDC696X.
MOSFET masontsivana
marika famantarana | fikirana | naoty | Unit | |
Naoty mahazatra | ||||
VDSS | Volavolan'ny tatatra | 60 | V | |
VGSS | Vavahady-Source Voltage | ±20 | V | |
TJ | Temperature Junction ambony indrindra | 150 | °C | |
TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | °C | |
IS | Diode Continuous Forward Current | Tc=25°C | 30 | A |
ID | Continuous Drain Current | Tc=25°C | 65 | A |
Tc=70°C | 42 | |||
I DM b | Nosedraina ny Current Drain | Tc=25°C | 250 | A |
PD | Famotehana Hery ambony indrindra | Tc=25°C | 62.5 | W |
TC=70°C | 38 | |||
RqJL | Thermal Resistance-Junction to Lead | Toetra mijanona | 2.1 | °C/W |
RqJA | Thermal Resistance-Junction to Ambient | t £ 10s | 45 | °C/W |
Toetra mijanonab | 50 | |||
I AS d | Avalanche Current, Pulse tokana | L=0.5mH | 18 | A |
E AS d | Avalanche Energy, Pulse tokana | L=0.5mH | 81 | mJ |
marika famantarana | fikirana | Fepetra fitsapana | Min. | Typ. | Max. | Unit | |
Toetra static | |||||||
BVDSS | Volontany fahatapahan'ny tatatra | VGS=0V, nyDS=250mA | 60 | - | - | V | |
IDSS | Afo Gate Voltage Drain Current | VDS=48 V, VGS=0V | - | - | 1 | mA | |
TJ=85°C | - | - | 30 | ||||
VGS(th) | Volavolan'ny vavahady | VDS=VGS, IDS=250mA | 1.2 | 1.5 | 2.5 | V | |
IGSS | Vavahady Leakage Current | VGS=±20V,VDS=0V | - | - | ±100 | nA | |
R DS(ON) 3 | Loharanon-drain'ny fanoherana amin'ny fanjakana | VGS= 10 V, nyDS=20A | - | 7.5 | 10 | m W | |
VGS= 4.5V, nyDS=15 A | - | 10 | 15 | ||||
Toetran'ny diode | |||||||
V SD | Diode Mandroso Voltage | ISD=1A, VGS=0V | - | 0.75 | 1.2 | V | |
trr | Fotoana fanarenana indray | ISD=20A, dlSD /dt=100A/µs | - | 42 | - | ns | |
Qrr | Reverse Recovery Charge | - | 36 | - | nC | ||
Toetra mavitrika3,4 | |||||||
RG | Vavahady fanoherana | VGS=0V,VDS=0V,F=1MHz | - | 1.5 | - | W | |
Ciss | Capacitance fampidirana | VGS=0V, VDS=30V, F=1.0MHz Ω | - | 1340 | - | pF | |
Coss | Output Capacitance | - | 270 | - | |||
Crss | Fahaiza-mifindra mivadika | - | 40 | - | |||
td(ON) | Ampidiro ny fotoana fanemorana | VDD=30V, IDS=1A, VGEN=10V, RG=6Ω. | - | 15 | - | ns | |
tr | Ampidiro ny Time Rise | - | 6 | - | |||
td (OFF) | Atsaharo ny fotoana fanemorana | - | 33 | - | |||
tf | Atsaharo ny fotoana fararano | - | 30 | - | |||
Toetran'ny fiampangana vavahady 3,4 | |||||||
Qg | Tontalin'ny saram-bavahady | VDS=30V, VGS= 4.5V, nyDS=20A | - | 13 | - | nC | |
Qg | Tontalin'ny saram-bavahady | VDS= 30 V, VGS= 10 V, IDS=20A | - | 27 | - | ||
Qgth | Tombontsoa amin'ny vavahady | - | 4.1 | - | |||
Qgs | Gate-Source Charge | - | 5 | - | |||
Qgd | Gate-Drain Charge | - | 4.2 | - |