WSD6040DN56 N-fantsona 60V 36A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny volavolan'ny WSD6040DN56 MOSFET dia 60V, ny ankehitriny dia 36A, ny fanoherana dia 14mΩ, ny fantsona dia N-channel, ary ny fonosana dia DFN5X6-8.
WINSOK MOSFET faritra fampiharana
MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET motera, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.
WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL8DN6LF6AG.PANJIT MOSFET PSMQC12N6LS1.POTENS Semiconductor MOSFET PDC6964X.
MOSFET masontsivana
| marika famantarana | fikirana | naoty | vondrona | ||
| VDS | Volavolan'ny tatatra | 60 | V | ||
| VGS | Vavahady-Source Voltage | ±20 | V | ||
| ID | Continuous Drain Current | TC=25°C | 36 | A | |
| TC=100°C | 22 | ||||
| ID | Continuous Drain Current | TA=25°C | 8.4 | A | |
| TA=100°C | 6.8 | ||||
| IDMa | Pulsed Drain Current | TC=25°C | 140 | A | |
| PD | Famotehana Hery ambony indrindra | TC=25°C | 37.8 | W | |
| TC=100°C | 15.1 | ||||
| PD | Famotehana Hery ambony indrindra | TA=25°C | 2.08 | W | |
| TA=70°C | 1.33 | ||||
| IAS c | Avalanche Current, Pulse tokana | L=0.5mH | 16 | A | |
| EASc | Single Pulse Avalanche Energy | L=0.5mH | 64 | mJ | |
| IS | Diode Continuous Forward Current | TC=25°C | 18 | A | |
| TJ | Temperature Junction ambony indrindra | 150 | ℃ | ||
| TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | ℃ | ||
| RθJAb | Thermal Resistance Junction amin'ny ambient | Toetra mijanona | 60 | ℃/W | |
| RθJC | Thermal Resistance-Junction to Case | Toetra mijanona | 3.3 | ℃/W | |
| marika famantarana | fikirana | NATREHINAY | Min. | Typ. | Max. | Unit | |
| voasakantsakan'ny | |||||||
| V(BR)DSS | Volontany fahatapahan'ny tatatra | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Afo Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Vavahady Leakage Current | VGS = ±20V, VDS = 0V | ±100 | nA | |||
| Momba ny toetra | |||||||
| VGS(TH) | Volavolan'ny vavahady | VGS = VDS, IDS = 250µA | 1 | 1.6 | 2.5 | V | |
| RDS(eo)d | Loharanon-drain'ny fanoherana amin'ny fanjakana | VGS = 10V, ID = 25A | 14 | 17.5 | mΩ | ||
| VGS = 4.5V, ID = 20A | 19 | 22 | mΩ | ||||
| ara | |||||||
| Qg | Tontalin'ny saram-bavahady | VDS=30V VGS=10V ID=25A | 42 | nC | |||
| Qgs | Gate-Sour Charge | 6.4 | nC | ||||
| Qgd | Gate-Drain Charge | 9.6 | nC | ||||
| td (amin'ny) | Ampidiro ny fotoana fanemorana | VGEN=10V VDD=30V ID=1A RG=6Ω RL=30Ω | 17 | ns | |||
| tr | Ampidiro ny Time Rise | 9 | ns | ||||
| td (eny) | Atsaharo ny fotoana fanemorana | 58 | ns | ||||
| tf | Atsaharo ny fotoana fararano | 14 | ns | ||||
| Rg | fanoherana Gat | VGS=0V, VDS=0V, f=1MHz | 1.5 | Ω | |||
| Dynamic | |||||||
| Ciss | Ao amin'ny Capacitance | VGS=0V VDS=30V f=1MHz | 2100 | pF | |||
| Coss | Out Capacitance | 140 | pF | ||||
| Crss | Fahaiza-mifindra mivadika | 100 | pF | ||||
| Toetran'ny diode avy amin'ny tatatra sy ny isa ambony indrindra | |||||||
| IS | Loharano Mitohy ankehitriny | VG=VD=0V , Force Current | 18 | A | |||
| ISM | Loharano Pulsed Current3 | 35 | A | ||||
| VSDd | Diode Mandrosoa Voltage | ISD = 20A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Fotoana fanarenana indray | ISD=25A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
