WSD40120DN56G N-fantsona 40V 120A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny volavolan'ny WSD40120DN56G MOSFET dia 40V, ny ankehitriny dia 120A, ny fanoherana dia 1.4mΩ, ny fantsona dia N-channel, ary ny fonosana dia DFN5X6-8.
Faritra fampiharana WINSOK MOSFET
MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.
WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa
AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.
MOSFET masontsivana
| marika famantarana | fikirana | naoty | vondrona |
| VDS | Volavolan'ny tatatra | 40 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current, VGS@10V1 | 120 | A |
| ID@TC=100℃ | Continuous Drain Current, VGS@10V1 | 82 | A |
| IDM | Pulsed Drain Current2 | 400 | A |
| EAS | Single Pulse Avalanche Energy3 | 400 | mJ |
| IAS | Avalanche Current | 40 | A |
| PD@TC=25℃ | Famotehana herinaratra tanteraka4 | 125 | W |
| TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | ℃ |
| TJ | Ny mari-pana amin'ny Junction miasa | -55 hatramin'ny 150 | ℃ |
| marika famantarana | fikirana | NATREHINAY | Min. | Typ. | Max. | Unit |
| BVDSS | Volontany fahatapahan'ny tatatra | VGS= 0V, nyD=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference amin'ny 25℃, ID=1mA | --- | 0.043 | --- | V/℃ |
| RDS(ON) | Loharanon'ny tatatra static amin'ny fanoherana2 | VGS=10V, ID=20A | --- | 1.4 | 1.8 | mΩ |
| RDS(ON) | Loharanon'ny tatatra static amin'ny fanoherana2 | VGS = 4.5 V, ID=20A | --- | 2.0 | 2.6 | mΩ |
| VGS(th) | Volavolan'ny vavahady | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.2 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.94 | --- | mV/℃ | |
| IDSS | Loharanon'ny tatatra amin'izao fotoana izao | VDS=32 V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32 V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Vavahady-Source Leakage Current | VGS=±20 V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Transconductance mandroso | VDS= 5V, nyD=20A | --- | 53 | --- | S |
| Rg | Vavahady fanoherana | VDS=0V ,VGS=0V , f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Tontalin'ny fiampangana vavahady (10V) | VDS= 15 V, VGS= 10 V, ID=20A | --- | 45 | --- | nC |
| Qgs | Gate-Source Charge | --- | 12 | --- | ||
| Qgd | Gate-Drain Charge | --- | 18.5 | --- | ||
| Td(on) | Fotoana fanemorana | VDD= 15 V, VGEN= 10 V, RG=3.3Ω, ID=20A ,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | Fotoana Mitsangana | --- | 9 | --- | ||
| Td(eny) | Atsaharo ny fotoana fanemorana | --- | 58.5 | --- | ||
| Tf | Fotoana fararano | --- | 32 | --- | ||
| Ciss | Capacitance fampidirana | VDS= 20 V, VGS=0V , f=1MHz | --- | 3972 | --- | pF |
| Coss | Output Capacitance | --- | 1119 | --- | ||
| Crss | Fahaiza-mifindra mivadika | --- | 82 | --- |
