WSD30160DN56 N-fantsona 30V 120A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny malefaka WSD30160DN56 MOSFET dia 30V, ny ankehitriny dia 120A, ny fanoherana dia 1.9mΩ, ny fantsona dia N-fantsona, ary ny fonosana dia DFN5X6-8.
Faritra fampiharana WINSOK MOSFET
MOSFET sigara elektronika, MOSFET fiampangana tsy misy tariby, MOSFET drôna, MOSFET fitsaboana, MOSFET charger fiara, MOSFET mpanara-maso, MOSFET vokatra nomerika, MOSFET kojakoja kely ao an-tokantrano, MOSFET elektronika mpanjifa.
WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi, FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET masontsivana
marika famantarana | fikirana | naoty | vondrona |
VDS | Volavolan'ny tatatra | 30 | V |
VGS | Gate-Source Voltage | ±20 | V |
ID@TC=25℃ | Continuous Drain Current, VGS@10V1,7 | 120 | A |
ID@TC=100℃ | Continuous Drain Current, VGS@10V1,7 | 68 | A |
IDM | Pulsed Drain Current2 | 300 | A |
EAS | Single Pulse Avalanche Energy3 | 128 | mJ |
IAS | Avalanche Current | 50 | A |
PD@TC=25℃ | Famotehana herinaratra tanteraka4 | 62.5 | W |
TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | ℃ |
TJ | Ny mari-pana amin'ny Junction miasa | -55 hatramin'ny 150 | ℃ |
marika famantarana | fikirana | NATREHINAY | Min. | Typ. | Max. | Unit |
BVDSS | Volontany fahatapahan'ny tatatra | VGS= 0V, nyD=250uA | 30 | --- | --- | V |
△BVDSS/△TJ | BVDSSTemperature Coefficient | Reference amin'ny 25℃, ID=1mA | --- | 0.02 | --- | V/℃ |
RDS(ON) | Loharanon'ny tatatra static amin'ny fanoherana2 | VGS= 10 V, ID=20A | --- | 1.9 | 2.5 | mΩ |
VGS= 4.5 V, nyD=15A | --- | 2.9 | 3.5 | |||
VGS(th) | Volavolan'ny vavahady | VGS=VDS, ID=250uA | 1.2 | 1.7 | 2.5 | V |
△VGS(th) | VGS(th)Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
IDSS | Loharanon'ny tatatra amin'izao fotoana izao | VDS= 24 V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
VDS= 24 V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
IGSS | Vavahady-Source Leakage Current | VGS=±20 V, VDS=0V | --- | --- | ±100 | nA |
gfs | Transconductance mandroso | VDS= 5V, nyD=10A | --- | 32 | --- | S |
Rg | Vavahady fanoherana | VDS=0V ,VGS=0V , f=1MHz | --- | 0.8 | 1.5 | Ω |
Qg | Tontalin'ny fiampangana vavahady (4.5V) | VDS= 15 V, VGS= 4.5 V, nyD=20A | --- | 38 | --- | nC |
Qgs | Gate-Source Charge | --- | 10 | --- | ||
Qgd | Gate-Drain Charge | --- | 13 | --- | ||
Td(on) | Fotoana fanemorana | VDD= 15 V, VGEN= 10 V, RG=6Ω, ID=1A, RL=15Ω. | --- | 25 | --- | ns |
Tr | Fotoana Mitsangana | --- | 23 | --- | ||
Td(eny) | Atsaharo ny fotoana fanemorana | --- | 95 | --- | ||
Tf | Fotoana fararano | --- | 40 | --- | ||
Ciss | Capacitance fampidirana | VDS= 15 V, VGS=0V , f=1MHz | --- | 4900 | --- | pF |
Coss | Output Capacitance | --- | 1180 | --- | ||
Crss | Fahaiza-mifindra mivadika | --- | 530 | --- |