WSD25280DN56G N-fantsona 25V 280A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny volavolan'ny WSD25280DN56G MOSFET dia 25V, ny ankehitriny dia 280A, ny fanoherana dia 0.7mΩ, ny fantsona dia N-channel, ary ny fonosana dia DFN5X6-8.
Faritra fampiharana WINSOK MOSFET
Point-of-Load synchronous matetika、Buck Converter、Networking DC-DC Power System、Fampiharana fitaovana herinaratra,E-sigara MOSFET, Wireless fiampangana MOSFET, drôna MOSFET, fitsaboana MOSFET, car charger MOSFET, mpanara-maso MOSFET, vokatra nomerika MOSFET, fitaovana kely ao an-tokantrano MOSFET, mpanjifa elektronika MOSFET.
WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa
Vidio ny Nxperian MOSFET PSMN1R-4ULD.
POTENS Semiconductor MOSFET PDC262X.
MOSFET masontsivana
| marika famantarana | fikirana | naoty | vondrona |
| VDS | Volavolan'ny tatatra | 25 | V |
| VGS | Gate-Source Voltage | ±20 | V |
| ID@TC=25℃ | Continuous Drain Current(Silicon Limited）1,7 | 280 | A |
| ID@TC=70℃ | Continuous Drain Current (Silicon Limited）1,7 | 190 | A |
| IDM | Pulsed Drain Current2 | 600 | A |
| EAS | Single Pulse Avalanche Energy3 | 1200 | mJ |
| IAS | Avalanche Current | 100 | A |
| PD@TC=25℃ | Famotehana herinaratra tanteraka4 | 83 | W |
| TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | ℃ |
| TJ | Ny mari-pana amin'ny Junction miasa | -55 hatramin'ny 150 | ℃ |
| marika famantarana | fikirana | NATREHINAY | Min. | Typ. | Max. | Unit |
| BVDSS | Volontany fahatapahan'ny tatatra | VGS= 0V, nyD=250uA | 25 | --- | --- | V |
| △BVDSS/△TJ | BVDSSTemperature Coefficient | Reference amin'ny 25℃, ID=1mA | --- | 0.022 | --- | V/℃ |
| RDS(ON) | Loharanon'ny tatatra static amin'ny fanoherana2 | VGS= 10 V, ID=20A | --- | 0.7 | 0.9 | mΩ |
| VGS= 4.5 V, nyD=20A | --- | 1.4 | 1.9 | |||
| VGS(th) | Volavolan'ny vavahady | VGS=VDS, ID=250uA | 1.0 | --- | 2.5 | V |
| △VGS(th) | VGS(th)Temperature Coefficient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Loharanon'ny tatatra amin'izao fotoana izao | VDS= 20 V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS= 20 V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Vavahady-Source Leakage Current | VGS=±20 V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Transconductance mandroso | VDS= 5V, nyD=10A | --- | 40 | --- | S |
| Rg | Vavahady fanoherana | VDS=0V ,VGS=0V , f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Tontalin'ny fiampangana vavahady (4.5V) | VDS= 15 V, VGS= 4.5 V, nyD=20A | --- | 72 | --- | nC |
| Qgs | Gate-Source Charge | --- | 18 | --- | ||
| Qgd | Gate-Drain Charge | --- | 24 | --- | ||
| Td(on) | Fotoana fanemorana | VDD= 15 V, VGEN=10V ,RG=1Ω, ID=10A | --- | 33 | --- | ns |
| Tr | Fotoana Mitsangana | --- | 55 | --- | ||
| Td(eny) | Fotoana fanemorana | --- | 62 | --- | ||
| Tf | Fotoana fararano | --- | 22 | --- | ||
| Ciss | Capacitance fampidirana | VDS= 15 V, VGS=0V , f=1MHz | --- | 7752 | --- | pF |
| Coss | Output Capacitance | --- | 1120 | --- | ||
| Crss | Fahaiza-mifindra mivadika | --- | 650 | --- |
