WSD100N06GDN56 N-fantsona 60V 100A DFN5X6-8 WINSOK MOSFET
Vidin'ny WINSOK MOSFET
Ny malefaka WSD100N06GDN56 MOSFET dia 60V, ny ankehitriny dia 100A, ny fanoherana dia 3mΩ, ny fantsona dia N-fantsona, ary ny fonosana dia DFN5X6-8.
Faritra fampiharana WINSOK MOSFET
Famatsiana herinaratra ara-pitsaboana MOSFET, PDs MOSFET, drone MOSFET, sigara elektronika MOSFET, fitaovana lehibe MOSFET, ary fitaovana herinaratra MOSFET.
WINSOK MOSFET dia mifanitsy amin'ny laharan'ny fitaovana marika hafa
AOS MOSFET AON6264C,AON6264E,AON6266E,AONS6662.STMicroelectronics MOSFET STL13N6F7,STL14N6F7.PANJIT MOSFET PSMQC33N6NS1.POTENS Semiconductor MOSFET PDC692X.
MOSFET masontsivana
| marika famantarana | fikirana | naoty | vondrona | ||
| VDS | Volavolan'ny tatatra | 60 | V | ||
| VGS | Vavahady-Source Voltage | ±20 | V | ||
| ID1,6 | Continuous Drain Current | TC=25°C | 100 | A | |
| TC=100°C | 65 | ||||
| IDM2 | Pulsed Drain Current | TC=25°C | 240 | A | |
| PD | Famotehana Hery ambony indrindra | TC=25°C | 83 | W | |
| TC=100°C | 50 | ||||
| IAS | Avalanche Current, Pulse tokana | 45 | A | ||
| EAS3 | Single Pulse Avalanche Energy | 101 | mJ | ||
| TJ | Temperature Junction ambony indrindra | 150 | ℃ | ||
| TSTG | Fitahirizana mari-pana | -55 hatramin'ny 150 | ℃ | ||
| RθJA1 | Thermal Resistance Junction amin'ny ambient | Toetra mijanona | 55 | ℃/W | |
| RθJC1 | Thermal Resistance-Junction to Case | Toetra mijanona | 1.5 | ℃/W | |
| marika famantarana | fikirana | NATREHINAY | Min. | Typ. | Max. | Unit | |
| voasakantsakan'ny | |||||||
| V(BR)DSS | Volontany fahatapahan'ny tatatra | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Afo Gate Voltage Drain Current | VDS = 48 V, VGS = 0V | 1 | µA | |||
| TJ=85°C | 30 | ||||||
| IGSS | Vavahady Leakage Current | VGS = ±20V, VDS = 0V | ±100 | nA | |||
| Momba ny toetra | |||||||
| VGS(TH) | Volavolan'ny vavahady | VGS = VDS, IDS = 250µA | 1.2 | 1.8 | 2.5 | V | |
| RDS(on)2 | Loharanon-drain'ny fanoherana amin'ny fanjakana | VGS = 10V, ID = 20A | 3.0 | 3.6 | mΩ | ||
| VGS = 4.5V, ID = 15A | 4.4 | 5.4 | mΩ | ||||
| ara | |||||||
| Qg | Tontalin'ny saram-bavahady | VDS=30V VGS=10V ID=20A | 58 | nC | |||
| Qgs | Gate-Sour Charge | 16 | nC | ||||
| Qgd | Gate-Drain Charge | 4.0 | nC | ||||
| td (amin'ny) | Ampidiro ny fotoana fanemorana | VGEN=10V VDD=30V ID=20A RG=Ω | 18 | ns | |||
| tr | Ampidiro ny Time Rise | 8 | ns | ||||
| td (eny) | Atsaharo ny fotoana fanemorana | 50 | ns | ||||
| tf | Atsaharo ny fotoana fararano | 11 | ns | ||||
| Rg | fanoherana Gat | VGS=0V, VDS=0V, f=1MHz | 0.7 | Ω | |||
| Dynamic | |||||||
| Ciss | Ao amin'ny Capacitance | VGS=0V VDS=30V f=1MHz | 3458 | pF | |||
| Coss | Out Capacitance | 1522 | pF | ||||
| Crss | Fahaiza-mifindra mivadika | 22 | pF | ||||
| Toetran'ny diode avy amin'ny tatatra sy ny isa ambony indrindra | |||||||
| IS1,5 | Loharano Mitohy ankehitriny | VG=VD=0V , Force Current | 55 | A | |||
| ISM | Loharano Pulsed Current3 | 240 | A | ||||
| VSD2 | Diode Mandroso Voltage | ISD = 1A , VGS=0V | 0.8 | 1.3 | V | ||
| trr | Fotoana fanarenana indray | ISD=20A, dlSD/dt=100A/µs | 27 | ns | |||
| Qrr | Reverse Recovery Charge | 33 | nC | ||||
